Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.

主权项

1. A semiconductor device, comprising:
a substrate including a first layer and a second layer over the first layer; a bump disposed over the second layer; a molding disposed over the second layer and surrounding the bump, wherein the second layer includes a protruded portion protruding from a sidewall of the molding adjacent to a periphery of the substrate; and a retainer disposed on the second layer, wherein the retainer is disposed between the molding and the periphery of the substrate, and the retainer includes silicon nitride (SiN), silicon dioxide (SiO2), or silicon oxynitride (SiON); wherein an included angle of the sidewall of the molding and an upper surface of the molding is smaller than ninety degrees; wherein the retainer has a trapezoidal cross-section, a bottom base of the trapezoidal cross-section is in contact with the second layer, an upper base of the trapezoidal cross-section is coplanar with a portion of a too surface of the molding immediately adjacent to the retainer, and the bottom base of the trapezoidal cross-section is longer than the upper base of the trapezoidal cross-section.