| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and apparatus which can make their light emitting efficiencies higher than conventional ones. <P>SOLUTION: In the semiconductor light emitting element wherein a PN-junction surface 11 for emitting a light can be so mounted as to become nearly vertical to a mounted surface 51 of a mounted body 5, there are provided a P-type and N-type semiconductor layers P, N forming the PN-junction surface 11, a light emitting body 1 whose mounting surface 121 mounted on the mounted surface 51 is formed nearly vertically to the direction of the PN-junction surface 11, and terminal electrodes 3, 3 formed in such vicinities of the mounting surface 121 as to be respectively in both end surfaces 131, 131 of the surfaces of the light emitting body 1 which are in the vertical direction to the PN-junction surface 11, and connected electrically with the P-type semiconductor layer P or the N-type semiconductor layer N. Further, the semiconductor light emitting element is so formed as to derive the light generated in the PN-junction surface 11 from the insides of both the end surfaces 131, 131 of the light emitting body 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
