| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming an ohmic electrode whose contact specific resistance is small and thermostability is high, capable of stably operating a device over a long period. <P>SOLUTION: A contact layer 2, comprising a p-type compound semiconductor containing at least one kind of element out of a group comprising gallium, aluminum, boron and indium as the group-III elements and nitrogen, is formed on a p-type compound semiconductor 1. A transition element layer 3a, containing at least one kind of element from among the transition elements other than gold and platinum, is formed on the contact layer 2; a platinum layer 3b comprising platinum is formed on the layer 3a; and after a gold layer 3c comprising gold is further formed on the platinum layer 3b, the layers are annealed as a whole. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
