发明名称 Protective thin film for FPDS, method for producing said thin film and FPDS using said thin film
摘要 The present invention provides a protecting film capable of preventing deterioration in adhesion and matching to a substrate (dielectric layer), and deterioration in electric insulation. The protecting film includes a film body composed of MgO or the like which is inhibited from reacting with CO2 gas and H2O gas in air to prevent degeneration of MgO or the like into MgCO3 and Mg(OH)2, etc. harmful to FPD. The film body is formed on the surface of the substrate, and the fluoride layer is formed on the surface of the film body. The fluoride layer is represented by MOXFY (M is Mg, Ca, Sr, Ba, an alkali earth complex metal, a rare earth metal, or a complex metal of an alkali earth metal and a rare earth metal, 0<=X<2, and 0<Y<=4), and is obtained by reaction of a gaseous fluorinating agent with MaO or the like. As the gaseous fluorinating agent, a fluorine gas, a hydrogen fluoride gas, BF3, SbF5 or SF4 is preferably used.
申请公布号 US6821616(B1) 申请公布日期 2004.11.23
申请号 US19990457743 申请日期 1999.12.10
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 SAKURAI HIDEAKI;YAMASHITA YUKIYA;KUROMITSU YOSHIROU
分类号 H01J9/24;C03C17/34;(IPC1-7):B32B9/04 主分类号 H01J9/24
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