| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pad for secondary which is used suitably for the secondary polishing that is performed after primary polishing in chemical mechanical polishing of a semiconductor wafer or the like, using a polyurethane based foam having hardness and permanent compressive strain in predetermined ranges as the material. <P>SOLUTION: Polyol component and isocyanate component are used as the main raw material, various sub row materials such as catalyst and water are blended to this, they are processed into a desired shape, thereby providing the polyurethane based foam 12. Asca-C hardness of the polyurethane based foam is set in a range 20-65, preferably 25-60, and the permanent compressive strain is set within 20%. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
