| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the size precision of a fine pattern formed by optical lithography by providing an exposure mask through which exposure having the light proximity effect corrected can be performed without correcting a design pattern itself. <P>SOLUTION: An exposure mask 1 has a transparent substrate 3 and a light shielding film 5 which is formed on one main surface of the transparent substrate 3 and has opening patterns 5a. In a state the parts of the light shielding film 5 which constitute the peripheral edge of the opening patterns 5a are projected in an eaves-shape in accordance with the density of the arrangement of opening patterns 5a, a recessed part 3a in an opening shape which is larger in size than the opening pattern 5a is provided on the part of the transparent substrate 3 exposed at the bottom part of each of the opening patterns 5a. The projection width (w) of the eaves part A of the light shielding film 5 on the recessed part 3a is adjusted by the peripheral arrangement density of the opening patterns 5a. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
