METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a capacitor of a semiconductor device is provided to prevent a leakage current between upper and lower electrodes by basically avoiding generation of polymer. A lower conductive layer(22), a dielectric layer(24) and the first interlayer dielectric(28) are deposited on a semiconductor substrate(20) having an underlying structure. The first interlayer dielectric is trench-etched to define a capacitor region by using the dielectric layer as an etch stop layer. An upper conductive layer is deposited on the front surface of the capacitor region. The second interlayer dielectric(32) is deposited on the resultant structure to gap-fill a trench. A planarization process is performed on the resultant structure to expose the first interlayer dielectric.