RRAM MEMORY CELL ELECTRODES

摘要

A RRAM memory cell is formed on a silicon substrate (12) having a operative junction therein and a metal plug (16) formed thereon, includes a first oxidation resistive layer (20); a first refractory metal layer (22); a CMR layer (24); a second refractory metal layer (26); and a second oxidation resistive layer (28). A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.