| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a semiconductor from being damaged due to cracking or chipping accompanied by blade vibration during dicing and achieving high reliability and high productivity without increasing a package size than heretofore. <P>SOLUTION: When a sub area 35 arranged like a line in a package structural body 50 is cut by a surface a between dicing areas 45 to separate it into WCSPs 10, a silicon substrate 12 is diced by a non-melting method (also called non-heating processing method) using laser light. The non-melting method uses a crack 82 induced by a reformed part 80 that is formed by laser light collected inside the silicon substrate. Then, a part including a sealing layer 42 on the silicon substrate is diced by turning a blade at high speed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
