发明名称 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system
摘要 A heat treatment apparatus has a controller ( 100 ) provided with a temperature estimator ( 110 ) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator ( 120 ) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table ( 122 ) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.
申请公布号 US6922522(B2) 申请公布日期 2005.07.26
申请号 US20030611908 申请日期 2003.07.03
申请人 TOKYO ELECTRON LIMITED 发明人 WANG WENLING;SAKAMOTO KOICHI;SUZUKI FUJIO;YOKOTA TAKASHI
分类号 G01J5/02;C23C16/46;C23C16/52;F27B5/06;F27D19/00;G01J5/00;G01J5/10;G01K15/00;H01L21/205;(IPC1-7):H05B1/02 主分类号 G01J5/02
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