发明名称 |
Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system |
摘要 |
A heat treatment apparatus has a controller ( 100 ) provided with a temperature estimator ( 110 ) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator ( 120 ) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table ( 122 ) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.
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申请公布号 |
US6922522(B2) |
申请公布日期 |
2005.07.26 |
申请号 |
US20030611908 |
申请日期 |
2003.07.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
WANG WENLING;SAKAMOTO KOICHI;SUZUKI FUJIO;YOKOTA TAKASHI |
分类号 |
G01J5/02;C23C16/46;C23C16/52;F27B5/06;F27D19/00;G01J5/00;G01J5/10;G01K15/00;H01L21/205;(IPC1-7):H05B1/02 |
主分类号 |
G01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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