发明名称 POWER MOS INTEGRATED CIRCUIT WITH BUILT-IN PROTECTION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a low-cost power MOS integrated circuit with a built-in protective circuit reduced in unnecessary power loss and raised in high integration degree. <P>SOLUTION: The circuit includes an output current detection circuit 19. In the output current detection circuit 19, the output of an output current intermittence circuit 15 is connected to the gate electrode in an over-current state that a comparison output of an over-current detecting comparator 14 connected between an input terminal 11 and ground 12 is fed, the source-drain electrode is connected between an output terminal 18 and the ground 12 in parallel with an output MOS transistor 17 which is connected between the output terminal 18 and the ground 12, and the output is fed as an input signal to the over-current detecting comparator 14. The circuit 15 includes an inverter circuit U for feeding as an reset input signal for a flip-flop circuit RS/FF by which the comparator 14 is fed as a set signal, and the output current detection circuit is fed as a reset input signal, while a capacitor C1 is fed with a charging voltage by the inverter circuit U. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005229461(A) 申请公布日期 2005.08.25
申请号 JP20040037900 申请日期 2004.02.16
申请人 TOSHIBA CORP 发明人 TSUNETSUGU YUKIO
分类号 H01L27/04;H01L21/822;H01L27/06;H03F1/52;H03K17/08 主分类号 H01L27/04
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