| 摘要 |
<p>A semiconductor storage device of the present invention comprises a plurality of alternately arranged select lines and bit lines, a plurality of word lines arranged substantially orthogonal to the select lines and bit lines, a plurality of MOS transistors, having first electrodes connected to the select lines, second electrodes connected to the bit lines and control electrodes connected to the word lines, forming a plurality of memory cells, a first voltage supply circuit connected to the select lines for supplying a first voltage to the first electrodes, and a second voltage supply circuit connected to the bit lines and the select lines for supplying a second voltage, varying in compliance with variation in the first voltage, to the second electrodes.</p> |
