| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress the occurrence of a scratch on the front surface of a film to be polished. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of flattening the front surface of the film to be polished by polishing the front surface of the film to be polished formed on a semiconductor substrate only with a base material by using a polishing pad 104 made of foam to which a plurality of bubbles 107 are introduced into the base material 105 while supplying an abrasive powder containing an abrasive gain and an additive made of a surfactant. Since the film to be polished is polished by using the polishing pad made of the foam in which a shell does not exist in the ambients of air bubbles, even if the abrasive powder in which the surfactant is used as the additive, is used, the occurrence of the scratch on the front surface of the film to be polished can be suppressed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
