| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a semiconductor device with high reliability capable of mounting in a low damage, and of forming a metal terminal having uniform height and smoothness at low cost. <P>SOLUTION: The rise in temperature of an insulating layer 6 generated by the frictional heat in cutting a workpiece by using a cutting tool is suppressed below temperature 80°C. After flattening processing, while maintaining a prescribed temperature range of temperature lower than 80°C through the whole cutting work process, an electrode 5 and an electrode 19 are correspondingly brought to contact at temperature lower than the hardening temperature of the insulating layer 6 above 80°C. The insulating resin is hardened above its hardening temperature, after liquefying the insulating layer 6 and filling up with the insulating resin of the insulating layer 6 between the electrode 5 and the electrode 19. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
