发明名称 Memory cell for storing an information item, memory circuit and method for producing a memory cell
摘要 The invention relates to a memory cell for providing an information item, having a memory element, which has a PMC resistance component with a solid electrolyte material. The solid electrolyte material may be put into a first state with a high electrical resistance and into a second state with a low electrical resistance. The memory element has a resistance element which is connected up to the PMC resistance component in such a way as to reduce the total resistance of the memory element in the first state.
申请公布号 US2005243596(A1) 申请公布日期 2005.11.03
申请号 US20050107182 申请日期 2005.04.15
申请人 SYMANCZYK RALF 发明人 SYMANCZYK RALF
分类号 G11C11/00;G11C16/00;H01L45/00;(IPC1-7):G11C11/00 主分类号 G11C11/00
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