| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing deterioration in an element characteristic caused by diffusion of heavy metal adhering to the rear side of a semiconductor substrate, and increasing the mechanical strength. <P>SOLUTION: A semiconductor chip 11 is provided with a silicon substrate 16 including an element forming region 21 on the upper side of which a MIS transistor source-drain diffusion layer is formed, and a scribe region 22 for surrounding the element forming region 21. The rear side of the element forming region 21 of the silicon substrate 16 has a mechanical cutting face 23, and the rear side of the scribe region 22 has a polish cutting face 24 whose surface roughness is smaller than that of the mechanical cutting face 23. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
