| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simple and a reliable light-receiving element that can maximize the light receiving area, and moreover can be manufactured inexpensively. <P>SOLUTION: The semiconductor light receiving element 1 comprises a crystal substrate 2 made of a conductive Si-based semiconductor; a buffer layer 3 formed on a surface at one side of the crystal substrate 2; at least one photosensitive layer 4, that is formed on the buffer layer 3, and is made of an insulating GaN-based material; a Schottky electrode 5 that is provided on a surface at one side of the photosensitive layer 4 that serves as a light receiving surface 4a, and is an electrode on one side for constituting the light reception element; and an electrode 7 at the other side for composing the light-receiving element 1, while being provided on a surface at the other side of the crystal substrate 2. <P>COPYRIGHT: (C)2007,JPO&INPIT |
