Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body

摘要

A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal. The half-bridge circuit further includes a high-side drive circuit having a level shifter with a level shifter transistor. The low-side transistor and the level shifter transistor are integrated in a common semiconductor body.

主权项

1. A half-bridge circuit, comprising:
a low-side transistor and a high-side transistor each comprising a load path and a control terminal, a high-side drive circuit comprising a level shifter with a level shifter transistor, wherein the low-side transistor and the level shifter transistor are integrated in a common semiconductor body; and an edge termination comprising a field electrode arranged above the first surface of the semiconductor body, the edge termination defining a ring; wherein the level-shifter transistor is implemented as a MOSFET, comprising:
a further source region, a further drift region and a further channel region arranged between the further source region and the further drift region; anda further gate electrode arranged adjacent to the further channel region and dielectrically insulated from the further channel region by a further gate dielectric wherein the MOSFET is a lateral MOSFET in which the source region and the drain region are distant in a lateral direction of the semiconductor body; wherein one of the source and drain regions of the lateral MOSFET is arranged inside the ring as defined by the edge termination, and wherein the other one of the source region and the drain region is arranged outside the ring as defined by the edge termination.