| 摘要 |
A semiconductor integrated Darlington circuit is provided including an input transistor driving an output transistor, two resistors, and a diode within a body of semiconductor material. The emitter and base regions of the transistors extend to a surface of the body, and, at such surface, the base region of the input transistor is surrounded by the emitter region thereof while a portion of the base region of the output transistor is disposed between the emitter regions of the two transistors. For increasing the resistance between the base regions of the two transistors, a slot is provided through the surface at a position within the emitter region of the input transistor and between the base regions of the two transistors.
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