发明名称 |
Energy storage devices formed with porous silicon |
摘要 |
In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor. |
申请公布号 |
US9466662(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201213730308 |
申请日期 |
2012.12.28 |
申请人 |
Intel Corporation |
发明人 |
Gardner Donald S.;Mosley Larry E. |
分类号 |
H01L21/02;H01L49/02 |
主分类号 |
H01L21/02 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. An energy storage device, comprising:
a mesoporous silicon layer formed within a substrate by electrochemically etching the substrate with no photolithography, the mesoporous silicon layer having pores with tapered pore openings and with a mean pore diameter of approximately 50 nanometers or less; a first conductive layer formed on the mesoporous silicon layer; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer. |
地址 |
Santa Clara CA US |