发明名称 Energy storage devices formed with porous silicon
摘要 In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor.
申请公布号 US9466662(B2) 申请公布日期 2016.10.11
申请号 US201213730308 申请日期 2012.12.28
申请人 Intel Corporation 发明人 Gardner Donald S.;Mosley Larry E.
分类号 H01L21/02;H01L49/02 主分类号 H01L21/02
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. An energy storage device, comprising: a mesoporous silicon layer formed within a substrate by electrochemically etching the substrate with no photolithography, the mesoporous silicon layer having pores with tapered pore openings and with a mean pore diameter of approximately 50 nanometers or less; a first conductive layer formed on the mesoporous silicon layer; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer.
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