发明名称 |
Conductive line patterning |
摘要 |
A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive. |
申请公布号 |
US9472501(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201514811562 |
申请日期 |
2015.07.28 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Ru-Gun;Hsieh Tung-Heng;Tsai Tsung-Chieh;Wu Juing-Yi;Lee Liang-Yao;Ting Jyh-Kang |
分类号 |
H01L23/528;H01L23/532;H01L23/522;H01L27/02;H01L21/768;G06F17/50;H01L21/3213;H01L27/118 |
主分类号 |
H01L23/528 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A conductive line structure, comprising:
a substrate; and a first conductive line formed over the substrate, the first conductive line having a first cut section, the first cut section having a first sidewall that forms a first cut angle and a second sidewall that forms a second cut angle, the first cut angle being different from the second cut angle, the first cut section being a gap between two portions of the first conductive line, and wherein a straight line extending along an elongated axis of each of the two portions of the first conductive line passes through the gap; and a second conductive line formed over the substrate, the second conductive line having a second cut section, the second cut section being a gap between two portions of the second conductive line, wherein a straight line extending along an elongated axis of each of the two portions of the second conductive line passes through the gap. |
地址 |
Hsin-Chu TW |