发明名称 Conductive line patterning
摘要 A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.
申请公布号 US9472501(B2) 申请公布日期 2016.10.18
申请号 US201514811562 申请日期 2015.07.28
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liu Ru-Gun;Hsieh Tung-Heng;Tsai Tsung-Chieh;Wu Juing-Yi;Lee Liang-Yao;Ting Jyh-Kang
分类号 H01L23/528;H01L23/532;H01L23/522;H01L27/02;H01L21/768;G06F17/50;H01L21/3213;H01L27/118 主分类号 H01L23/528
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A conductive line structure, comprising: a substrate; and a first conductive line formed over the substrate, the first conductive line having a first cut section, the first cut section having a first sidewall that forms a first cut angle and a second sidewall that forms a second cut angle, the first cut angle being different from the second cut angle, the first cut section being a gap between two portions of the first conductive line, and wherein a straight line extending along an elongated axis of each of the two portions of the first conductive line passes through the gap; and a second conductive line formed over the substrate, the second conductive line having a second cut section, the second cut section being a gap between two portions of the second conductive line, wherein a straight line extending along an elongated axis of each of the two portions of the second conductive line passes through the gap.
地址 Hsin-Chu TW