| 发明名称 |
Method of Forming a Trench Using Epitaxial Lateral Overgrowth |
| 摘要 |
In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings. An epitaxial layer is grown on the semiconductor substrate by an epitaxial lateral overgrowth process. The first openings are filled by the epitaxial layer and the epitaxial layer is grown onto adjacent portions of the first dielectric layer so that part of the first dielectric layer is uncovered by the epitaxial layer and a gap forms between opposing sidewalls of the epitaxial layer over the part of the first dielectric layer that is uncovered by the epitaxial layer. The gap defines a first trench in the epitaxial layer that extends to the first dielectric layer. |
| 申请公布号 |
US2016308028(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615187232 |
申请日期 |
2016.06.20 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Joshi Ravi;Baumgartl Johannes;Poelzl Martin;Kuenle Matthias;Steinbrenner Juergen;Haghofer Andreas;Gruber Christoph;Ehrentraut Georg |
| 分类号 |
H01L29/66;H01L29/423;H01L21/311;H01L21/02;H01L21/306 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a trench in a semiconductor material, the method comprising:
forming a first dielectric layer on a semiconductor substrate, the first dielectric layer comprising first openings; and growing an epitaxial layer on the semiconductor substrate by an epitaxial lateral overgrowth process, wherein the first openings are filled by the epitaxial layer and the epitaxial layer grows onto adjacent portions of the first dielectric layer so that part of the first dielectric layer is uncovered by the epitaxial layer and a gap forms between opposing sidewalls of the epitaxial layer over the part of the first dielectric layer that is uncovered by the epitaxial layer, the gap defining a first trench in the epitaxial layer that extends to the first dielectric layer. |
| 地址 |
Villach AT |
