发明名称 |
Nonvolatile Charge Trap Memory Device Having A Deuterated Layer In A Multi-Layer Charge-Trapping Region |
摘要 |
A charge trap memory device is provided. In one embodiment, the charge trap memory device includes a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region. A tunnel dielectric layer is disposed on the vertical channel, a multi-layer charge-trapping region including a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed on the first nitride layer. The second nitride layer includes a majority of charge traps distributed in the multi-layer charge-trapping region. |
申请公布号 |
US2016308009(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201615189547 |
申请日期 |
2016.06.22 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
LEVY Sagy;JENNE Fredrick;RAMKUMAR Krishnaswamy |
分类号 |
H01L29/40;H01L29/792;H01L29/06;H01L29/04;H01L29/16 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
1. A charge trap memory device comprising:
a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region; a tunnel dielectric layer disposed on the vertical channel; and a multi-layer charge-trapping region including a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed on the first nitride layer, wherein the second nitride layer comprises a majority of charge traps distributed in the multi-layer charge-trapping region. |
地址 |
San Jose CA US |