发明名称 |
Tunnel emitter photocathode |
摘要 |
A method of producing a tunnel emitter photocathode consisting of heating a semiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.
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申请公布号 |
US3913218(A) |
申请公布日期 |
1975.10.21 |
申请号 |
US19740476248 |
申请日期 |
1974.06.04 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
MILLER, BRIAN S. |
分类号 |
H01J9/12;(IPC1-7):B01J17/00 |
主分类号 |
H01J9/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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