GAS CONTROL IN PROCESS CHAMBER

摘要

A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

主权项

1. A process chamber comprising:
a sidewall; a substrate support; an exhaust vent disposed over the substrate support, wherein a processing region is formed between the exhaust vent and the substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region; a gas ring comprising:
an annular shaped body having an inner surface that circumscribes an annular region;a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region, wherein the plurality of first nozzles are formed in the annular shaped body in a first circular array; anda plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region, wherein the plurality of second nozzles are formed in the annular shaped body in a second circular array.