发明名称 |
Integrated memory matrix programmable by external wiring - has reading storage elements on common substrate and connected by electric conductors in columnar array |
摘要 |
<p>The common substrate has diffused into it several double emitter transistors. Their first emitter ranges are connected row-wise to first electrical conductors and their second emitter ranges are connected column-wise to second electrical conductors. Programming is performed by external feeding of a current via the appropriate row and column conductor of a transistor to an intersection for programming and by the short-circuit thus generated in at least one base-emitter stage. The supply current can be such that an emitter is short-circuited with base and collector.</p> |
申请公布号 |
DE2621594(A1) |
申请公布日期 |
1977.11.24 |
申请号 |
DE19762621594 |
申请日期 |
1976.05.14 |
申请人 |
INTERSIL INC. |
发明人 |
DALE FAGAN,LLOYD;ALEXANDER TRIPP,GARETH |
分类号 |
G11C17/16;H01L23/525;H01L27/07;H01L27/102;(IPC1-7):G11C5/12;H01L27/04 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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