发明名称 Integrated memory matrix programmable by external wiring - has reading storage elements on common substrate and connected by electric conductors in columnar array
摘要 <p>The common substrate has diffused into it several double emitter transistors. Their first emitter ranges are connected row-wise to first electrical conductors and their second emitter ranges are connected column-wise to second electrical conductors. Programming is performed by external feeding of a current via the appropriate row and column conductor of a transistor to an intersection for programming and by the short-circuit thus generated in at least one base-emitter stage. The supply current can be such that an emitter is short-circuited with base and collector.</p>
申请公布号 DE2621594(A1) 申请公布日期 1977.11.24
申请号 DE19762621594 申请日期 1976.05.14
申请人 INTERSIL INC. 发明人 DALE FAGAN,LLOYD;ALEXANDER TRIPP,GARETH
分类号 G11C17/16;H01L23/525;H01L27/07;H01L27/102;(IPC1-7):G11C5/12;H01L27/04 主分类号 G11C17/16
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