发明名称 PREPARATION OF LIGHT WAVE GUIDE ELEMENT
摘要 PURPOSE:To provide a light wave guide element having formed light wave guide layer with higher refractive index than substrate single crystal, which is obtained by developing epitaxial growth of a specific single crystal thin film on a single crystal of Bi12SiO2 or Bi12GeO20.
申请公布号 JPS5345255(A) 申请公布日期 1978.04.22
申请号 JP19760120058 申请日期 1976.10.05
申请人 SUMITOMO ELECTRIC INDUSTRIES 发明人 TADA KOUJI
分类号 G02B6/12;H01P3/16 主分类号 G02B6/12
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