发明名称 |
Plasma etching apparatus |
摘要 |
In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.
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申请公布号 |
US4101411(A) |
申请公布日期 |
1978.07.18 |
申请号 |
US19770787878 |
申请日期 |
1977.04.15 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, KEIZO;OKUDAIRA, SADAYUKI;KANOMATA, ICHIRO;SAKUDO, NORIYUKI |
分类号 |
H01J37/32;(IPC1-7):C23C15/00;B01K1/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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