Semiconductor component with MOS capacity - has complementary conductivity zone around capacity to reduce parasitic capacity to substrate

摘要

The semiconductor device has a semiconductor body with a substrate of a first conductivity, type with a covering layer of second conductivity type covered by an insulating layer. A MOS capacity is formed between a conducting layer on the insulating layer and a highly doped zone in the layer of second conductivity type. Between this highly doped zone and the rest of the layer of the second conductivity type an encircling zone of the first conductivity type is provided. This reduces the parasitic capacity which would otherwise exist between the MOS capacity and the substrate, and widens the field in which the device can be applied.