| 摘要 |
<p>A semiconductor integrated circuit device comprises a semi-conductor substrate (40) of one conduction type, an epitaxial layer (41) of opposite conduction type formed on the semiconductor substrate (40), buried layer (42) of opposite conduction type located between the semiconductor substrate (40) and the epitaxial layer (41) and at least one circuit element (45, 46, 47, 48) formed in the epitaxial layer (41 ) above the buried layer (42).</p><p>The integrated circuit device also includes a first isolation region (43) which surrounds and is spaced from the buried layer (42) and extends from the surface of the epitaxial layer (41) into the substrate, the at least one circuit element being formed in the epitaxial layer (41) surrounded by the first isolation region (43), and a second isolation region (44) located wtihin the first isolation region (43) extends from the surface of the epitaxial layer (41) into the buried layer (42), at least one circuit element being surrounded by the second isolation region (44).</p> |
