发明名称 |
VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON MONOKRISTALLINEM SILICIUM IN BANDFORM |
摘要 |
This invention relates to a process for manufacturing monocrystalline silicon. According to this process, the fused zone Z is formed on a cylinder (1) of polycrystalline silicon and a film (5) is "drawn" by means of a seed-plate (3). The fused zone Z is obtained by resorting to heating means, notably one or several electron guns whose beam is situated in a plane P2. By means of this process, monocrystalline silicon is manufactured in the form of tape. |
申请公布号 |
DE3017016(A1) |
申请公布日期 |
1980.11.20 |
申请号 |
DE19803017016 |
申请日期 |
1980.05.02 |
申请人 |
AGENCE NATIONALE DE VALORISATION DE LA RECHERCHE |
发明人 |
RODOT,HUGUETTE |
分类号 |
C30B15/00;C30B15/06;C30B15/16;C30B29/06;C30B29/64;H01L21/208;(IPC1-7):30B13/06;30B29/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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