| 摘要 |
PURPOSE:To perform a highly accurate control of resistance value by a method wherein an inverted conduction type layer to a resistance layer is formed by performing an ion injecting method at a suitably deep point in a semicoductor resistance layer. CONSTITUTION:After an N<-> type silicon layer is epitaxially grown on a semiconductor substrate 10 consisted of P type silicon, an isolation region 11 is formed and with which a semiconductor resistance layer 12 consisted of N<-> type silicon which has been electrically isolated from other circuit element region on the isolation region 11, is formed. Then an inverted conductive P type layer to the resistance layer 12 or a resistance layer 13 is formed by performing an ion injecting method at a prescribed depth from the surface of the semiconductor resistance layer 12 and the thickness of the semiconductor resistance layer 12 is formed in such way that limitation is placed on the thickness from the lower part. After that, a pair of an N<+> type contact regions 14 and 15 are formed on the surface of the semiconductor resistance layer 12. Then electrode layers 17 and 18, which are contacting the regions 14 and 15, are formed through an intermediate of a contact hole. |
