| 摘要 |
PURPOSE:To obtain a preferably uniform impurity diffusing layer in the semiconductor device by firstly heating an atmosphere containing hydrogen, then introducing an impurity diffusing source in the state that hydrogen is suppressed to conduct the diffusion, then introducing hydrogen, and secondly heating it. CONSTITUTION:Nitrogen, oxygen and hydrogen as reducing gas are introduced at the initial stage of heating treatment. Then, a semiconductor substrate is introduced, heated, boron trichloride as a P type diffusing source, oxygen and nitrogen as carrier gas are introduced at the middle stage, and diffusing treatment is conducted. Hydrogen is further introduced at the final stage so as to prevent the decomposition of the residual boron trichloride, and the semiconductor substrate is heated. Thus, the layer resistance of the P type impurity diffusing layer can become uniform, and the controllability of the layer resistance can be increased. |
