MOS varactor voltage dependent capacitor - is formed by stepped metallisation over different dielectric-constant well layers
摘要
<p>The MOS varactor type semiconductor has a stepped formation voltage dependent capacitor as a metallised surface on an insulating stepped layer wall construction. The various rings of the well construction have different dielectric constants to permit adjustment of the capactive value. The metallisation (11) covers all steps (7 to 10) in the layered well and the lower step (7) is immediately above the semiconductor device body (1).PS.</p>
申请公布号
DE1955345(C2)
申请公布日期
1982.09.02
申请号
DE19691955345
申请日期
1969.11.04
申请人
LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE
发明人
GOLDBACH, GUENTHER, DIPL.-PHYS., 7106 NEUENSTADT, DE
