| 摘要 |
PURPOSE:To contrive high density and high-speed operation of the titled memory storage by a method wherein front and back side connecting terminals, to be used for address signal which will be directly connected by a through hole, are provided on a substrate at the same position on the front and back sides of the substrate, and a plurality of semiconductor memory elements are mounted on both sides of the substrate. CONSTITUTION:As a connection terminal pattern 6 is arranged at the same position on the front and back of as substrate, a semiconductor housing vessel 2 is to be symmetrically placed on both sides of a wiring substrate 4. The connection terminals 6 located on the front and back, to be used for the address signal for the semiconductor memory element, are connected directly by a through hole 7. Said through hole 7 is, of course, connected to a lead terminal 5 using an internal wiring. As each connection terminal, to be used for the address signal opposingly provided on the front and back of the substrate, is directly communicated by the through hole, the wiring length of the titled memory storage can be reduced. |
