发明名称 |
A HETEROJUNCTION SEMICONDUCTOR LASER |
摘要 |
A heterostructure semiconductor laser is characterized by having a channeled mesa contiguous with the top surface of the laser substrate. The channeled mesa comprises an elongated mesa with an elongated channel formed in the top surface of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers. |
申请公布号 |
DE3067156(D1) |
申请公布日期 |
1984.04.26 |
申请号 |
DE19803067156 |
申请日期 |
1980.09.04 |
申请人 |
XEROX CORPORATION |
发明人 |
BURNHAM, ROBERT D.;SCIFRES, DONALD R.;STREIFER, WILLIAM |
分类号 |
H01L21/208;H01S5/00;H01S5/223;H01S5/227;(IPC1-7):H01S3/19 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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