Method of making complementary GaAs heterojunction transistors

摘要

A complementary GaAs Transistor pair is formed of a p-type MODFET and an n-type FET having an ion-implanted channel doping with a heterojunction gate. One set of structures is implemented in a planar process utilizing molecular beam epitaxy. The p-MODFET threshold voltage is determined by the thickness and doping of the p-AlGaAs layer plus the Schottky barrier height of the metal gate, and the ion implantation dosage is adjusted to give the proper threshold voltage for the enhancement mode n-channel heterojunction FET.