| 摘要 |
PURPOSE:To operate the title transistor so as to stabilize the burying of a gate electrode even when a faucet is generated by determining a gap between the gate electrode and source-drain electrodes regarding the thickness of an silicon dioxide insulating film, one part of which functions as a gate insulating film, and easily bringing the gap to desired 500Angstrom or less. CONSTITUTION:A mask 20 consisting of an silicon dioxide film is formed onto a P-silicon substrate 11. N<+>-silicon is grown onto the substrate 11 through epitaxial growth, and pairing source-drain electrodes 13 are shaped. The mask 20 is removed, and an silicon dioxide insulating film 15 is formed. Conductive polysilicon is deposited through chemical vapor growth, and the conductive polysilicon is patterned to shape a gate electrode 12. A section between both source-drain electrodes 13 is filled sufficiently through the insulating film 15 in the presence of a faucet 19. An silicon dioxide insulating film 16 coating the gate electrode 12 is shaped through thermal oxidation. An N-type impurity in the source-drain electrodes 13 is diffused to the substrate 11 through said thermal oxidation and the heating of the thermal oxidation, thus forming source- drain regions 14.
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