| 摘要 |
Field effect semiconductor device (I) uses a two-dimensional electron gas (2 DEG.). (I) comprises (a) a semi-insulating GaAs substrate ; (b) an intrinsic-type GaAs active layer formed on (a) ; (c) a super- lattice structure layer comprising (i) a first intrinsic-type AlAs thin layer formed on (b), (ii) a GaAs thin well layer formed on (i), a second undoped GaAs layer and an atomic plane of dopant atoms formed between the first and second undoped GaAs layers ; (d) a second intrinsic-type AlAs thin layer formed on layer (ii), forming a quantum well ; (e) a doped AlGaAs layer formed on layer (c) ; and (f) electrodes for source drain and gate formed on the quantum well.
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