| 摘要 |
The semiconductor device for preventing the cutting of aluminium line has an upper aluminium line (3) and a lower aluminium line (1) and a phospho silicate glass (2). The lower aluminium line (1) is arranged in the PSG (2) layer. The upper aluminium line (3) is arranged on the PSG (2). The (1) and (3) are connected at regular intervals by punching a hole at PSG layer. |
