发明名称 |
Thin film semiconductor device and method of fabricating the same |
摘要 |
A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.
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申请公布号 |
US4943837(A) |
申请公布日期 |
1990.07.24 |
申请号 |
US19880166518 |
申请日期 |
1988.03.10 |
申请人 |
HITACHI, LTD. |
发明人 |
KONISHI, NOBUTAKE;ONO, KIKUO;SUZUKI, TAKAYA;MIYATA, KENJI |
分类号 |
H01L21/205;H01L21/336;H01L27/12;H01L29/423;H01L29/78;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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