| 摘要 |
To provide an electricity storage device state inference method by which a state of an electricity storage device can be accurately inferred by a simple method in which measurement of temperature is not performed. [Solution] The internal impedance |Z| of an electricity storage device 10 is measured at a frequency at which the internal impedance of the electricity storage device 101 does not change with temperature, and the SOC or SOH of the electricity storage device 101 is inferred on the basis of the measured value. Furthermore, the real part R of the internal impedance of the electricity storage device 10 is measured at a frequency at which the real part R of the internal impedance of the electricity storage device 101 does not change with temperature, and the SOC or SOH of the electricity storage device 101 is inferred on the basis of the measured value. |
