| 摘要 |
PURPOSE:To obtain the device of small size and thin type by a method wherein a lead to be used for connection of a substrate is attached and connected directly to the electrode terminal of a semiconductor device using a bonding agent. CONSTITUTION:A P-layer 11a and an N-layer 11b are provided on an N type Si substrate 11, an aperture 12a is provided on an SiO2 film 12, an Al electrode 13 is attached, and a terminal part 13a extending to the circumferential edge of a pellet 1 is formed. SiO2 14 is covered on the part other than the terminal part 13a, and electrodes 10 are arranged at the prescribed pitch. On the other hand, a connecting lead 20 of microscopic width and wiring patterns 21 and 22 are provided on a wiring substrate 2 by performing a photomechanical method, and they are placed on a jig 40 with the face 2a, whereon the lead 20 is provided, facing upward. The terminals 10 of the pellet 1 are faced each other, a pellet 1 is vacuum-deposited at the tip of the tube 41 which is attached to the hole 40 of the jig 40 corresponding to the through hole 25 on the substrate 2, bonding agents 3 and 4 are applied, and they are hardened by irradiating ultraviolet rays. According to this constitution, the semiconductor device and the substrate can be miniaturized and thinly formed, and the lead pin of and resin coating on the semiconductor substrate can be dispensed with, thereby enabling to cut down the cost of production. |
