| 摘要 |
PURPOSE:To increase an photoelectric current and to reduce the influence of a noise in a driving circuit, etc., by using a phototransistor as a photo sensor. CONSTITUTION:A gate electrode 2 is formed on a glass substrate 1, and amorphous material Si3N4-3 and amorphous material Si-4 are filmed on the electrode, and Cr film is formed on the film. A source electrode 5 and a drain electrode 6 are formed by patterning the Cr film. thence, a TFT element B is formed on the substrate 1 by patterning amorphous material Si. Thence, H-type amorphous material Si-7 is filmed, and P-type amorphous material Si-8 and N-type amorphous material Si-9 are filmed sequentially on the Si-7. Also, non-doped amorphous material Si can be interposed among the layers of Si-7, Si-8, and Si-9. Transparent conductive film 10 is patterned by generating on such NPN structure, and furthermore, the phototransistor A is formed on the electrode 5 by patternizing the NPN structure.
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