发明名称 |
Insulated gate semiconductor device with reduced based-to-source electrode short |
摘要 |
A vertical power MOSFET structure having a source and base region which are not shorted together is provided. The source and base region are formed in a semiconductor substrate using a selectively patterned gate stack which is formed on the substrate as a mask. The drift region is formed of a semiconductor material covering a semiconductor substrate. The semiconductor substrate is of the same conductivity type as the drift region for a MOSFET and is of an opposite conductivity type for an IGBT.
|
申请公布号 |
US5223732(A) |
申请公布日期 |
1993.06.29 |
申请号 |
US19910706498 |
申请日期 |
1991.05.28 |
申请人 |
MOTOROLA, INC. |
发明人 |
CLARK, LOWELL E. |
分类号 |
H01L29/417;H01L29/739;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|