INCLINED FUNCTION MATERIAL THIN FILM AND THIN FILM TRANSISTOR

摘要

PURPOSE:To provide a semiconductor device having a multi-layered wiring where a lower layer wiring and an upper layer wiring are effectually prevented from being short-circuited. CONSTITUTION:An insulator thin film 3 comprising silicon, oxygen, and nitrogen is employed as an inclined function material thin film which has concentration gradients opposite to a thickness direction with respect to the oxygen and the nitrogen. The insulating thin film is applied to the gate insulating layer 3 of a thin film transistor and to insulating layers of other semiconductor devices.