| 摘要 |
PURPOSE:To provide a Schottky barrier diode in which characteristics are improved such that the forward rising voltage is equivalent to that of Ge and the reverse withstand voltage is equivalent to that of Si. CONSTITUTION:The Schottky barrier diode comprises an Si epitaxial layer 2 formed on an Si substrate 1, a guard ring 3 formed to surround a predetermined region of the epitaxial layer 2, a thin film 7 composed of Ge single crystals or Si-Ge strained super lattices formed in the guard ring, and a Schottky electrode 5 formed on the thin film. |
