| 摘要 |
PURPOSE:To provide a Schuottky barrier diode for high frequency band having small contact area requiring low capacity in which low capacity is sustained while increasing the bonding pad in order to improve workability in the wire bonding and fluctuation of characteristics is suppressed. CONSTITUTION:An N<-> type epitaxial layer 2 is grown on an N<+> type silicon substrate 1 and an SiO2 film 3 of 3mum is formed thereon. The SiO2 film 3 is then subjected to etching or taper etching), at the central part and the peripheral part of the chip, until the thickness of the SiO2 film 3 becomes 0.5mum. The SiO2 film 3 at the contact opening and the dicing region around the chip is then etched to expose the N<-> type epitaxial layer 2. Thereafter, an anode electrode 4 (a Schottky barrier electrode), which will become a bonding pad, is formed and rear surface polishing is applied before a cathode electrode (ohmic electrode) 5 is formed. |
