| 摘要 |
PURPOSE:To reduce contact resistance at a contact face between a substrate and a metallic electrode. CONSTITUTION:A conductive-type monocrystal layer is formed on a conductive- type semiconductor substrate with a high concentration of impurities. A Schottky electrode 5 is formed on the monocrystal layer and a metallic electrode 7 is formed on the rear side of the substrate 1. An insulating material 4a is formed partly on a contact face between the substrate 1 and the metallic electrode 7 so that the interfacial boundary is enlarged in length. |
