| 摘要 |
<p>PURPOSE:To protect a semiconductor device against a short circuit by an insulating film even if solder flows unintentionally to the side face of the device by a method wherein a groove is provided to each side of a semiconductor substrate so as to confront each other when the semiconductor substrate is diced. CONSTITUTION:An N-type silicon wafer 4 is used, and a P<+> region 5 and an N<+> region 6 are symmetrically formed by diffusing impurities through both the sides of the wafer 4. The P region 5 constitutes a bidirectional diode of NPN structure with an N<-> layer 4, and the N<+> region 6 forms a channel stopper region located at the end of a chip. Then, an oxide film 7 covering both the sides of the wafer 4 is partially removed, and grooves are provided onto dicing lines on both the sides by etching. Furthermore, the inner sides of the grooves are covered with an oxide film 7 by thermal oxidation. hen, a contact hole is provided to the oxide film 7, Al is evaporated and patterned into an electrode 9, and then the wafer 4 is diced along the grooves 8 for the formation of chips 1. A connection conductor 3 is brazed to the electrode 9 with solder 2 for assembling, where an insulating is provided to prevent short circuits.</p> |
